High efficiency (EQE=37.5%) infrared (850 nm) light-emitting diodes with Bragg and mirror reflectors
نویسندگان
چکیده
Developed and investigated are IR (850 nm) light-emitting diodes based on AlGaAs/Ga(In)As heterostructures grown by the MOCVD technique with multiple quantum wells in active region a double optical reflector consisted of multilayer Al 0.9 Ga 0.1 As/Al As Bragg heterostructure an Ag mirror layer. Light-emitting external efficiency EQE=37.5% at current densities greater than >10 A/cm 2 have been fabricated. Keywords: diode, AlGaAs/GaAs heterostructure, reflector, InGaAs wells.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2022
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/sc.2022.14.53866.9711